Amorphous phase transition metal oxide films for electrochromic application
ID:90 Submission ID:98 View Protection:ATTENDEE Updated Time:2026-10-21 10:02:46 Hits:4 Invited speech

Start Time:2026-10-27 11:00 (Asia/Shanghai)

Duration:15min

Session:[D2] Tuesday 27 October 2026 » [S1] Oct. 27 AM

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Abstract
Electrochromic films and devices have broad application prospects in smart energy-saving windows. We developed a facile and general room-temperature photochemical deposition method for fabricating a series of electrochromic and ion-storage oxide films including WO3, V2O5 and NiOx [1–7]. This method features mild reaction conditions, simple equipment, large-area coating capability, and enables precise modulation of film composition, thickness, crystallinity and porous structure [1–7]. By investigating the correlations among film composition, microstructure and performance, it is found that amorphous films exhibit superior electrochromic properties compared with crystalline counterparts. For instance, amorphous V2O5 films deliver richer color variations, wider optical modulation range and faster response speed [2,7]. Incorporation of structural water into WO3 films induces pseudocapacitive behavior dominated by surface redox reactions, which drastically improves the near-infrared response speed and cycling stability of the films [4,6], as well as enhances their electrochromic energy-storage performance [5]. Tuning the V/W ratio in amorphous binary vanadium-tungsten mixed metal oxide films optimizes their ion storage performance while maintaining optical inertness [3]. Based on electrochromic and ion-storage films prepared via the photochemical method, electrochromic devices with large photothermal modulation amplitude, rapid response and high cycling stability were successfully constructed by regulating the charge balance between the two types of films [1–7]. Our work lays a solid foundation for advancing the application of electrochromic technology in smart energy-saving windows.
Keywords
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Speaker
Cheng Wei
Xiamen University of Technology

Submission Author
Cheng Wei Xiamen University of Technology
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